Mosfet 20n60c3

SPI20N60C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

20n60c3 Mosfet In India
20n60c3 Mosfet Equivalent
Mosfet 20n60c3
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Наименование прибора: SPI20N60C3

Маркировка: 20N60C3

Тип транзистора: MOSFET

20N60C3 Datasheet: 45A, 600V, UFS Series N-Channel IGBT, 20N60C3 PDF Download Intersil, 20N60C3 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage. FDmesh™ Power MOSFET (with fast diode) General features High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge Low gate input resistancE Tight process control and high manufacturing yields Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an. 600V CoolMOS™ N-Channel Power MOSFET; SPP20N60C3; SPP20N60C3. Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7. 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the 'working horse' of the portfolio. Summary of Features.

Полярность: N

Максимальная рассеиваемая мощность (Pd): 208 W

Предельно допустимое напряжение сток-исток |Uds|: 600 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3.9 V Best free online games for mac no download.

Максимально допустимый постоянный ток стока |Id|: 20.7 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 87 nC

Время нарастания (tr): 5 ns

Выходная емкость (Cd): 780 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm

Тип корпуса: TO262

SPI20N60C3 Datasheet (PDF)

0.1. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

20n60c3 Mosfet In India

0.2. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

0.3. spi20n60c3.pdf Size:215K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI20N60C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

Другие MOSFET.. SPI11N60CFD, SPI11N60S5, SPI11N65C3, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, IRF510, SPI20N60CFD, SPI20N65C3, SPI21N50C3, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5.

20n60c3 Mosfet Equivalent

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20N60C3 Datasheet PDF - Intersil Corporation

Part Number	*20N60C3*
Description	HGTG20N60C3
Manufacturers	Intersil Corporation
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There is a preview and 20N60C3 download ( pdf file ) link at the bottom of this page. Total ( 7 pages )

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HGTG20N60C3, HGTP20N60C3,

January 2000 File Number 4492.2

This family of MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

The IGBT is ideal for many high voltage switching

www.DataSheaept4pUlic.caotimons operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

Formerly developmental type TA49178.

PART NUMBER

BRAND

TO-247

HGTP20N60C3

G20N60C3

TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

Symbol

Features

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC

• Low Conduction Loss

- TB334 “Guidelines for Soldering Surface Mount

Packaging

(FLANGE)

COLLECTOR

JEDEC TO-263AB

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,598,461

4,803,533

4,417,385

4,684,413

4,890,143

4,620,211

4,809,047

4,443,931

4,717,679

4,904,609

4,639,754

4,823,176

4,516,143

4,783,690

4,963,951

4,641,162

4,860,080

4,587,713

4,801,986

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

RG = 10Ω, L = 1mH, VCE = 480V

250

200

175

125

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

120

110

TJ = 150oC, VGE = 10V OR VGE = 15V

TJ = 25oC, VGE = 10V OR 15V

5 10 15 20 25 30 35

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

DUTY CYCLE <0.5%, VCE = 10V

250

150

100

5 6 7 8 9 10 11 12 13 14 15

FIGURE 13. TRANSFER CHARACTERISTIC

IG (REF) = 1mA, RL = 15Ω, TC = 25oC

VCE = 400V

0 10 20 30 40 50 60 70 80 90 100

FIGURE 14. GATE CHARGE WAVEFORMS

CIES

FREQUENCY = 1MHz

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

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Mosfet 20n60c3

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Featured Datasheets

Mosfet Transistor Pdf

Part Number	Description	Manufacturers
20N60C2	The function is SPP20N60C2.	Infineon Technologies
20N60C3	The function is HGTG20N60C3.	Intersil Corporation
20N60C5	The function is IXKH20N60C5.	IXYS
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